Memory FAQs
 
Home
News
Products
Shop
Memory
Corporate
Contact
 

News
Industry News
Publications
CST News
Help/Support
Member Area
Tester Brochure
Demo Library
Software
Tester FAQs

biology medicine news product technology definition

Sunday, March 26, 2017
Memory Industry News
Email ArticlePrinter Format PreviousNext

New ways to alter magnetic patterns can lead to improved memory devices


Friday, January 06, 2017

Researchers at Johannes Gutenberg University, Mainz and the Massachusetts Institute of Technology have proven that is possible to move magnetic textures, or skyrmions, backwards and forwards between different positions billions of times, which could improve memory devices.

“The spins are aligned in a way that if you walk through the hedgehog structure they twist in a spiral fashion in each direction,” explained Kai Litzius from Johannes Gutenberg University. “Because the twist is always in the same direction, the structure is called topologically protected.

“This term means that removing the skyrmion is a difficult process: it is like trying to remove the hair whorl on the back of your head. You will always have a small region of hairs pointing into a different direction - here it is outward.”

Since the skyrmions are stable, they are being considered for use in future magnetic storage devices. One of these approaches, magnetic shift register, or racetrack memory, promises low access times, high information density, and low energy consumption.

“You can imagine the ‘track’ as a small wire made of magnetic material, Litzius said. “The skyrmions would be the ‘cars’ moving along the track. Reading and writing of information on the device would be performed at fixed positions, either creating/removing a car (writing) or watching the cars pass by without interfering (reading).”

Since skyrmions can be shifted by electrical currents and feel a repulsive force from the edges of the magnetic track as well as from single defects in the wire, they can move undisturbed through the track.

“Just consider if a specific car had already passed the read unit, because it read another information first,” described Litzius. “What you do is reverse the current and shift all the skyrmions backwards until you reach the interesting slot in your chain again. This process must be able to happen millions of times to make a memory device reliable.”

“What we did in the experiment was to apply bipolar current pulses to the system. In this way, we were able to move the train of skyrmions back and forth billions of times,” Litzius concluded.

By: DocMemory
Copyright © 2017 CST, Inc. All Rights Reserved

Email ArticlePrinter Format PreviousNext
Latest Industry News
Thanks to DRAM prices, Micron is far ahead on quarterly revenue3/24/2017
Samsung to work with eSilicon and Rambus to create HBM2 memory to network interface chip3/24/2017
Japanese start-up to manufacture power diodes with gallium oxide process3/24/2017
Flash storage is taking over3/24/2017
China/s aggressive expansion will drain tech telents globally3/23/2017
UMC to run 28nm in Xiamen3/23/2017
Most tech industry immigrants are legally in the country3/23/2017
Wal-Mart launch incubator lab as its effort to embrace technology3/23/2017
Micron/s acquisition of Cando establishes quality center in Taiwan3/22/2017
Qualcomm introduced chip for under $50 phones3/22/2017

CST Inc. Memory Tester DDR Tester
Copyright © 1994 - 2017 CST, Inc. All Rights Reserved