DocMemory
 
Home
News
Products
Shop
Memory
Corporate
Contact
 

News
Industry News
Publications
CST News
Help/Support
Member Area
Tester Brochure
Demo Library
Software
Tester FAQs

biology medicine news product technology definition

Saturday, February 25, 2017
Memory Industry News
Email ArticlePrinter Format PreviousNext

Panasonic/UMC partners in ReRAM memory


Friday, February 17, 2017

Panasonic is partnering with Taiwanese chip foundry United Microelectronics Corp. to develop and mass-produce a power-sipping type of nonvolatile memory known as resistive random access memory, or ReRAM.

The partners plan to use a 40-nanometer fabrication process to make ReRAM chips that can run on as little as one-seventh the power of today's NAND flash memory, another type of nonvolatile memory that can store data with the power switched off.

Electricity consumption is a limiting factor for battery-powered gadgets. Panasonic believes its power-saving nonvolatile memory can foster the development of the internet of things -- a vast network of internet-enabled devices. The company expects to sell its ReRAM for wearable gadgets such as smartwatches, and for sensors and other components in security systems, production equipment and a variety of connected devices.

While Panasonic and UMC will co-develop the microfabrication technologies, the Japanese company will handle the ReRAM design and the Taiwanese company will handle production.

The plan is to ship samples in 2018 and begin commercial production in 2019, offering ReRAM embedded in microcontrollers. Panasonic will also promote ReRAM as a storage medium for personal information in passports and smartcards used for public services.

The goal is to quickly achieve yearly sales of 5 billion yen ($44 million) by carving out niches in markets now served by flash memory. By licensing the technology to chipmakers, Panasonic aims to make its ReRAM a standard for nonvolatile memory used in devices for IoT.

The Japanese company began the industry's first small-lot production of ReRAM back in 2013, using a 180nm fabrication process, but those chips were not competitive with flash memory in terms of power consumption or storage capacity.

By: DocMemory
Copyright 2017 CST, Inc. All Rights Reserved

Email ArticlePrinter Format PreviousNext
Latest Industry News
Toshiba samples 512Gbit 3D NAND with 64 layers2/24/2017
Exynos 9 is 10 core with 10nm FinFET processs2/24/2017
Over 100 million GPU's shipped in Q42/24/2017
SK Hynix to bid on Toshiba Semiconductors2/24/2017
Tsinghua Unigroup plans IPO2/23/2017
Globalfoundries offer 45nm RFSOI process acquired from IBM2/23/2017
U.S. Government clears Renesas/Intersil merger to go ahead2/23/2017
Supreme Court: U.S. patent law does not cover export of a single component2/23/2017
Foxconn starts massive recruit of college grads in China2/22/2017
Micron to complete R & D facility in Boise2/22/2017

CST Inc. Memory Tester DDR Tester
Copyright © 1994 - 2017 CST, Inc. All Rights Reserved