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Wednesday, June 28, 2017
Memory Industry News
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Samsung claims 2nd generation 10nm FinFET process


Friday, April 21, 2017

Samsung Electronics has completed the development of its second-generation 10-nanometer process, the company said.

The 10-nanometer Lower Power Plus (10LPP) increases performance by 10 percent and consumes 15 percent less power than its predecessor the 10-nanometer Lower Power Early (10LPE) process, the company added.

Samsung began mass production of 10-nanometer processors, using the 10LPE process, last year in October. It used the process for its own System-on-a-Chip (SoC), the Exynos 9, and Qualcomm's Snapdragon 835, which powers the Galaxy S8 and S8 Plus.

The newer process will likely be used to make SoCs that power the Galaxy Note 8 in the fall.

The company said it will diversify its client base with the second-generation 10-nanometer process to not only mobile clients, but for computing, wearables, the Internet of Things, and networks.

Samsung will also expand its S3 line at Hwaseong to prepare for increased demand for its 10-nanometer process.

The company built 14-nanometer chips up until last year.

Samsung previously said it plans to move to 7-nanometer after 10-nanometer.

By: DocMemory
Copyright 2017 CST, Inc. All Rights Reserved

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