Thursday, February 15, 2007
Micron unveiled a new range of CMOS image sensors and a 1-Gbit mobile DRAM bundled with 1, 2 and 4-Gbit NAND in a multichip package.
The image sensors were developed in a second iteration of Micron's 1.75-micron pixel design and will come in versions where the resolution is either 5-, 3- or 1.3-megapixels for design into high end phones, mainstream versions and entry models respectively.
The main advantage of the 1.75 micron pixel technology is smaller and slimmer phone designs, brighter pictures and better power efficiency, the company said.
The 5- and 3-megapixel sensors are scheduled to be sampling in the second quarter of the years and the 1.3-megapixel version in late first quarter 2007. Mass production is expected summer 2007.
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