The device, presented at the International Solid-State Circuits Conference (ISSCC) in San Francisco, uses the Phase-change RAM (PC-RAM) technology and stores an equivalent of 4 MBit. The module uses the previously developed low power phase change memory cells with a 100 microampere write current, the companies stated in a press release.

The companies now added peripherals to enable high-speed write and read operations which enables microcontrollers to access the memory content at read access times of 20 nanoseconds and write data rates of up to 426 kByte/s that has been achieved despite the serial write scheme the researchers have implemented in order to keep the write current low. Operating at a single supply voltage of 1.5 volts, the device also eliminates the need for a power supply circuit that generates a high volume on-chip, the companies said.

By: DocMemory
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