Hynix Semiconductor has signed a land contract at Chongju, North Chungchong Province of South Korea for the construction of a 12-inch fab for NAND flash production.

Construction is slated to start in April and be completed in 2009. Hynix will fabricate NAND flash with 16Gb and above densities on 40nm at M11.

The new facility will have a double-floor design, with M11 beneath and M12 above. By taking these fabs into account, Hynix will house a total of four 12-inch fabs,M10 in Icheon, South Korea and C2 in Wuxi, China.

By: DocMemory
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