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Intel unveils 128-Mbit phase-change memory


Tuesday, April 17, 2007 Intel Corp. is preparing to sample a 128-Mbit phase-change memory that will roll into volume production in the second half of the year using 90-nanometer technology.

The device, codenamed Alverstone, is Intel's first phase-change memory product and is being billed as a NOR flash compatible replacement. Intel is the second-largest NOR flash vendor behind Spansion Inc.

Intel unveiled the part at its Spring development forum in Beijing. Intel Chief Technology Officer Justin Rattner said the part has six times the write performance of today's NOR flash and is much more "robust," lasting for at least one million write cycles.

Phase-change memory is vying with a handful of other next-generation alternatives, such as FeRAM and MRAM, to replace DRAM and Flash once they are tripped up by scaling limits. Many technologists expect flash to reach its limit at the 45-nanometer or 35-nanometer process node.

By: DocMemory
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