Toshiba announced a new series of mobile phone embedded NAND flash memories, mobileLBA-NAND, in a configurable single-level cell (SLC) memory area and a multi-level cell (MLC) memory area. Samples of mobileLBA-NAND packaged in multi-chip package (MCP) will be available from August 2007.

The five memories in the mobileLBA-NAND series range in capacity from 2Gb to 32Gb. The 2Gb, 4Gb and 8Gb versions can be allocated as SLC up to their full capacity, while the 16Gb and 32Gb versions can support up to 8Gb of SLC, offering manufacturers greater flexibility in allocating memory in their products, Toshiba said. The new NAND flash memories will be shipped primarily in MCPs form, with a fine pitch ball-grid array (FBGA).

Alongside a logical block address access (LBA) controller, all of the new mobileLBA-NAND memories integrate a unique control function able to address both SLC and MLC. The new memories also support a standard NAND flash interface, which means they can easily be introduced into current generations of products, Toshiba noted.

The LBA controller carries out essential functions, such as writing block management and error code correction (ECC), which minimizes any changes in the host controller specification. As a result, the new memories offer product developers immediately applicable solutions for reducing development time and costs for new and upgraded products.

By: DocMemory
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