Samsung Electronics has announced that its 50nm-class DDR2 in 1Gb density has been certified by Intel to work with Intel's existing and next-generation chipsets at speeds of 800 megabits per second (Mbps).

Samsung's 50nm-class DRAM processing technology will be used in mass producing DDR2 beginning the first half of 2008, as well as other next-generation DRAM memory, including DDR3, GDDR4 and GDDR5, plus the latest mobile DRAM, said Samsung.

Samsung developed its 50nm-class 1Gb DDR2 DRAM in October 2006 and it claimed that no other company has yet developed similar process technology for DDR2. Processing 1Gb DDR2 DRAM in the 50nm range doubles the productivity of the same specification DDR2 based on 80nm, while production efficiency is also enhanced by 50% over DRAM produced using the 60nm fabrication process, the company noted.