IBM and TDK yesterday announced a joint program to do high-density magnetic random access memories (MRAMs) research.

The new multiyear program will aim for a 20-fold increase in the memory density of MRAMs by switching to a writing mechanism, called spin-momentum transfer, that draws less power and uses smaller bit cells.

"We have had a few research breakthroughs in tunnel junction MRAMs in the last few years, but none of our designs have made it into commercial chips yet," said Bill Gallagher, Senior Manager, Exploratory Nonvolatile Memories at IBM's T.J. Watson Research Center (Yorktown Heights, N.Y.). "We think this new program using the spin-momentum transfer has a better chance. We think we can lower power requirements, shrink the bit cell and get unlimited longevity using this new writing method called the spin-momentum transfer effect."

Spin-momentum uses the magnetization of the spinning electron to change the magnetization of the MRAM bit cell. Just by passing a spin-polarized write-current through the magnetic layer of an MRAM bit cell, the new approach can flip it from a one to a zero, and vice versa.

By: DocMemory
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