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TSMC starts embedded flash production via 0.13 micron


Friday, August 31, 2007

TSMC announced that it is the first pure-play foundry to launch production of a fully logic compatible 0.13-micron process featuring embedded flash technology.

TSMC said that the 0.13-micron embedded flash process employs the same split-gate flash cell as the previous generation, enabling easy migration. It is fully compatible with TSMC's logic baseline of 0.13-micron general-purpose process (G) and low power process (LP), TSMC said.  Compatibility also signals that copper wiring comes into play for TSMC's embedded flash process starting with this 0.13-micron node.

The new process is being touted as a good fit with wireless applications operated by single, button-size batteries. "The process's low power transistor makes it ideal for ZigBee/Wibree devices, wireless headsets, hearing aids, SmartCards and other applications requiring ultra low power consumption ranging from 1.2V to 1.5V," Sam Chen, director of platform marketing at TSMC, said in a statement.

By: DocMemory
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