Toshiba and SanDisk have announced the inauguration of their new 12-inch NAND flash fab at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.

The fab is expected to begin mass production in late 2007 and will ramp to reach a monthly capacity of 80,000 wafers in the second half of 2008. Production will be introduced at 56nm and transition to 43nm in March 2008, the companies said.

As Fab 4 still has space to expand, Toshiba and SanDisk indicated that further investment could take output to 210,000 wafers per month based on future market demand.

Toshiba funded construction of the Fab 4 building, and Flash Alliance, a Toshiba-SanDisk venture established in July 2006 is funding the advanced manufacturing equipment now being installed at the fab.

By: DocMemory
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