Monday, February 25, 2008
Winbond Electronics is planning introducing the 58nm process node for both specialty DRAM and commodity DRAM production in 2008.
Winbond sold its 8-inch fabs to Vanguard International Semiconductor Corporation (VIS), Winbond will use its 12-inch fab to service customers who are still looking for foundry services.Winbond currently fabricates specialty DRAM on 90nm node.
Winbond will move specialty DRAM directly to 58nm node for the next-phase of production in the third quarter of 2008. For commodity DRAM, he also updated that mass production on 70nm will be made during mid-2008 with pilot run of 58nm also slated to begin in the third quarter. Mass production of 58nm-made commodity DRAM is scheduled in 2009 at the earliest, he said.
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