Memory giant Hynix Semiconductor Inc and Grandis Inc this week reported that they have signed a long-term license agreement for memory products incorporating Grandis’ patents and intellectual property in spin-transfer torque random access memory (STT-RAM). The deal also covers work to integrate Grandis’ fundamental STT-RAM technology into Hynix’s future memory products.

STT-RAM is a next-generation, non-volatile memory (NVM) solution that is meant to overcome the limitations of conventional magnetic RAM (MRAM) technologies, the companies pointed out. The duo said that while existing memory technologies can be difficult to manufacture beyond the 40-nm process node, STT-RAM has shown excellent scalability with shrinking design rules, translating to greater density and, ultimately, lower cost per die.

Also, STT-RAM consumes less power than existing mainstream memories, with unlimited endurance and fast read/write capability, according to the companies.

Technical teams from both Hynix and Grandis will implement Grandis’ STT-RAM technology, including magnetic tunnel junction (MTJ) materials and structures optimized for low writing current and high thermal stability, integration of MTJ and CMOS processes, and design of STT-RAM cells and memory arrays.

Sung Wook Park, head of Hynix’s R&D division, commented that the company is committed to being at the forefront of next-generation memory development and believes Grandis is leading in STT-RAM technology with its broad portfolio of fundamental patents in this area. “Through this partnership with Grandis, we look forward to integrating leading-edge STT-RAM technology into our semiconductor manufacturing processes and to a new era in memory capability at advanced technology nodes,” Park said in a statement.

“STT-RAM is a disruptive technology that combines all the benefits of SRAM, DRAM and flash memory, as well as offering scalability to future process nodes. Our recent advances in magnetic materials have significantly lowered write current and opened up new markets for STT-RAM. We are excited to partner with Hynix, a world leader in DRAM, in developing STT-RAM memory products and accelerating their time to market with our leading STT-RAM technology,” added Dr. Yiming Huai, VP of engineering and CTO of Grandis, in the statement.

Renesas Technology Corp also has a memory deal in place with Grandis that sees the two collaborate on the development of 65-nm MRAM and the use of spin torque transfer writing technology, in which data is written by aligning the spin direction of the electrons flowing through a tunneling magneto-resistance element. 

By: DocMemory
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