Tuesday, August 19, 2008
IBM and its development partners have claimed the first working SRAM memory cell implemented using a 22-nm manufacturing process. The SRAM cell was built at its 300-mm fab in Albany, New York.
The SRAM is a basic building block of both high-performance memory and complex logic circuits such as microprocessors. The IBM 22-nm SRAM cell utilizes a conventional six-transistor design and has an area of 0.1 square microns, the company said.
The leading-edge of commercial manufacturing is 45-nm. IBM and its partners are in development with their 32-nm high-k metal gate technology. IBM-alliance researchers optimized the SRAM cell design and circuit layout to improve stability and developed several fabrication processes in order to make the new SRAM cell possible. The researchers utilized high-NA immersion lithography to print the aggressive pattern dimensions and densities.
By: DocMemory
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