Tuesday, October 28, 2008
Toshiba Corp. Monday (Oct. 27) launched a new line-up of 43-nm single-level cell (SLC) NAND flash memory products available in densities ranging from 512 Mbits to 64 Gbits.
The new lineup includes three products—16Gb, 32Gb and 64Gb—which integrate 43-nm monolithic 16Gb chips, the highest density SLC NAND chips available, according to Toshiba. The devices will come to market in the first quarter of 2009, the company said.
SLC chips are said to offer fast read and write times and support a large number of write and erase cycles. Many of the early models of solid-state drives use SLC NAND.
Toshiba (Tokyo) said it the SLC devices offer support for mobile phones, office automation equipment and servers, all of which require high levels of read and write speeds and reliability.
In recent years, Toshiba has focused on high density multi-level cell (MLC) chips for data storage for products like memory cards and MP3 players. The company said production of SLC chips has been limited to its 56- and 70-nm process technologies.
In offering a wider range of SLC flash memories, Toshiba aims to expand its selection of products for embedded applications, the company said.
By: DocMemory
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