Monday, November 24, 2008
Intel Corporation and Micron Technologies Inc. have started volume production of their jointly developed 34-nm, 32 gigabit multi-level cell (MLC) NAND flash memory devices.
The joint venture company, IM Flash Technologies, also said it will start sampling lower density multi-level cell (MLC) and single-level cell (SLC) products using the 34-nm process technology early next year.
The companies say they are ahead of schedule with 34-nm NAND production, expecting their Lehi facility to have transitioned more than 50 percent of its capacity to 34-nm by the end of the year.
By: DocMemory
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