Hynix Semiconductor announced it has developed 2Gb mobile DRAM chips using 54nm process technology.

The new Hynix 2Gb mobile DRAM boasts maximum operating speed of 400Mbps at 1.2V power supply and processes up to 1.6 gigabytes per second with a 32-bit I/O.

Hynix' new 2Gb mobile DRAM, which meets JEDEC standard, is suited for the next-generation MID (Mobile Internet Device) and UMPC (ultra mobile PC) applications, according to the company.

Hynix has scheduled to kick off the mass production in the first half of 2009.

By: DocMemory
Copyright © 2023 CST, Inc. All Rights Reserved