Thursday, January 29, 2009
Samsung Electronics Co. Ltd. has announced that it has developed a 4-Gbit DDR3 DRAM chip using a 50-nm manufacturing process. The memory operates at 1.35 volts and has a maximum data transmission speed of 1.6-Gbits per second, Samsung said.
"We have leveraged our strength in innovation to develop the first 4-Gbit DDR3, in leading the industry to higher DRAM densities," said Kevin Lee, vice president responsible for technical marketing at Samsung Semiconductor Inc., in a statement.
The 4-Gbit DDR3 can be produced in 16-Gbyte registered dual in-line memory modules (RDIMMs) for servers, as well as 8-Gbyte unbuffered DIMMs (UDIMMs) for workstations and desktop PCs, and 8-Gbyte small outline DIMMs (SODIMMs) for laptops.
By applying dual-die package technology the memory component can deliver modules of up to 32-Gbytes memory capacity, Samsung said.
Samsung did not say when the chip would be available as a sample, in volume production or at what price it would be sold.
By: DocMemory
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