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Micron unveils high density block abstracted NAND


Thursday, March 12, 2009 Micron Technology Inc. has rolled out its high-density portfolio of block abstracted (BA) NAND flash memory.

Based on Micron's 34-nm process technology, BA NAND is a single-package solution that combines multilevel cell (MLC) NAND with a memory controller.

It eliminates the need for controllers/systems to undergo arduous re-designs to adopt successive generations of NAND, according to Micron (Boise, Idaho). BA NAND is designed for use in personal media players and other applications.

''Currently, most NAND flash memory host controllers are tasked with managing critical NAND functions such as block management and wear-leveling algorithms, and providing adequate error correction code (ECC) coverage to assure system reliability,'' according to Micron.

''However, because these features are becoming more advanced with every generation of NAND, designers are required to keep up with the latest innovations in order for their chipsets to properly manage NAND and assure reliable system operation,'' according to Micron.

''Micron's BA NAND enables designers to migrate from raw NAND to a managed solution with minimal changes. It employs its own embedded controller to remove the burden of NAND management from the host chipset, allowing system manufacturers to keep up with NAND technology innovations and improve their time to market,'' according to the company.

Micron is currently sampling 8- and 16-GB BA NAND.

By: DocMemory
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