Hynix Semiconductor has announced development of 1Gb DDR2 mobile DRAM using 54nm process technology for high-performance mobile applications.

Hynix's  54nm mobile DRAM delivers a maximum speed of 1066MHz. With 32-bit I/O, the device boasts bandwidth of 4.26GB/s on a single channel device and 8.52GB/s on a dual channel, the company said.

Hynix said it offers the customer flexible options with 2- or 4-bit prefetch, and 16- or 32-bit I/O on a single chip. The new mobile DDR2 is also an eco-friendly device since it consumes only 50% of power compared to the previous generation mobile DDR, and 30% compared to standard DDR2 DRAM, it said.

The new Hynix mobile DRAM complies with the JEDEC standards, and is well suited for next-generation mobile applications such as MID (Mobile Internet Device), netbooks and high-end smartphones requiring high bandwidth and extended battery life, the company said.

The 54nm mobile DRAM is available in JEDEC standard packages and also in custom packages to meet a wide range of user requirements, it added

By: DocMemory
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