The startup, called Qs Semiconductor Corp., came out of stealth mode on Wednesday (June 24) and said that it is developing a nonvolatile memory, based a carbon-silicon or silicon carbide (SiC) on silicon substrate technology.

The four-year-old startup is devising a 64-kilobit device, with eventual plans to produce a 1-gigabit product at the 65-nm node. The company is also in talks to develop its technology at SVTC Technologies Inc., an R&D foundry vendor.

''We're focused on storage-class memories and the hand-held market,'' said Bob Goodman, a semiconductor veteran who is president and chief executive of Qs Semiconductor (Sunnyvale, Calif.).

The wide band-gap characteristics of SIC-on-silicon technology enables ''fast read and write times'' and ''no wear out'' capabilities for its proposed devices. ''We're simply trapping a charge in SiC,'' Goodman said. "SiC is great for that.''

The company claims that it can devise and scale its technology using standard LPCVD equipment. ''It's in-situ doping of carbon,'' he told press at the Web-Feet Nonvolatile Memory Conference here. ''It's a p-n-p stack.''

By: DocMemory
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