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Samsung to go to 40nm 1.35V DDR3 chip


Tuesday, July 21, 2009

Samsung has announced that it will be the first memory manufacturer to begin mass production on a new class of 2Gb DDR3 devices using 40nm technology. Samsung says that the move to 40nm process technology will mean that it gains a 60% increase in production productivity compared to its older 50nm process.

The chips will be produced in 16GB, 8GB, and 4GB RDIMMS for servers. Samsung will also produce UDIMMS for workstations and desktop PCs along with SODIMMs for notebooks up to 4GB using the new chip.

The 2Gb chips are energy efficient and intended for high-density, high-performance memory applications. Each chip supports a data rate of up to 1.6Gbps at 1.35 volts. 2Gb DDR3 chips are expected to account for 82% of the total DDR3 DRAM market sold by 2012.

By: DocMemory
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