Elpida Memory is scheduled to migrate to 40nm-class production in 2010 to avoid lagging behind competitors, according to industry sources.

Elpida intends to focus its efforts on developing a mature 40nm node, and regard 50nm as a transitional process.

Elpida recently developed a die shrink to 60nm, based on its existing 65nm equipment, indicated the sources. The company is even mulling the possibility of skipping production of 50nm DRAM chips, which has been held off due to the global financial crisis.

Samsung Electronics recently ramped chip production on 40nm, coupled with its 6F2 technology, the sources indicated. The leading DRAM maker is on track to introduce 4F2 technology, when its 40nm yield matures.

Micron Technology, which already adopted 6F2 memory cells in 0.11-micron, is scheduled to mass produce chips using 40nm class process technology in 2010, according to the sources. The US-based memory maker also expects to move to a 4F2 cell design in 2010, when its 40nm coupled with 6F2 becomes a mature process.

Among Taiwan-based DRAM makers, Nanya Technology and Inotera Memories are expected to enter 40nm production ahead of the peers, the sources said. Nanya and Inotera said in previous reports that the technology transition to 50nm stack will be completed at the end of 2010.

By: DocMemory
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