Friday, August 21, 2009
Phison Electronics has said that its new NAND flash controller chips for USB flash drives and memory cards are all ready to support Toshiba's 32nm process technology. The Taiwan-based controller IC designer is preparing to go into mass production at any time.
Phison's revelation of its product development comes in the wake of recent speculation indicating Toshiba's schedule to kick off mass production of 32nm-made NAND flash chips has been delayed.
Toshiba was originally scheduled to start mass producing 32Gb NAND flash memory using 3-bit per cell (3bpc) 32nm multilevel cell (MLC) class process technology in July, and then ramp up the output aggressively throughout the first quarter of 2010, according to previous reports.
In other news, sources at memory makers revealed that Samsung Electronics is expected to roll out its 35nm generation NAND flash chips at the end of 2009. The Korean vendor reportedly has entered the sampling stage, gearing up a push to make 32Gb the mainstream density.
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NAND flash makers: Production schedule for next-generation process technology |
|
Company |
Current |
Next |
Production schedule |
Status |
|
Samsung |
42nm |
35nm* |
End-2009* |
- |
|
Toshiba |
43nm |
32nm 3bpc |
2H 2009 |
The company began sampling 32nm generation devices in April. |
|
Intel-Micron |
34nm |
20nm |
2010* |
The two jointly announced development of new 3bpc 34nm chips in August, with mass production slated for 4Q09. |
|
The two are scheduled to introduce 20nm at end-2009. |
|
Hynix |
41nm |
- |
- |
- |
*Note: Information from industry sources
By: DocMemory
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