Chartered Semiconductor Manufacturing is scheduled to launch its 32nm process technology in the fourth quarter of 2009, and move to 28nm in the first half of 2010, industry sources have revealed. The Singapore-based foundry is expected to update its process advancement at an upcoming technology forum in Taiwan.

Chartered may disclose plans to test run its 32nm silicon-on-insulator (SOI) process in fourth-quarter 2009, and unveil its roadmap for the 28nm bulk CMOS technology during the forum to be held tomorrow (September 2), the sources said. Chartered's 28nm node will be based on high-k metal-gate (HKMG) technology from the IBM-led joint-development alliance, and built on a gate-first approach.

Chartered's 2009 Technology Forum will take place in Hsinchu, Taiwan, with CEO Song-Hwee Chia hosting the event, according to information from its website. The topics to be featured include Chartered's roadmap for 32nm, 28nm and beyond processes, and its readiness for 45/40nm LP technology

By: DocMemory
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