Elpida Memory said it has developed a copper through-silicon via technology (Cu-TSV) and applied it to an 8-Gbit DRAM with vertical connections among eight memory die and an interface chip.

While several of the major memory IC producers have said they plan to offer TSV-enabled memory products, Elpida appears to be the first to commit to production in late 2009 or early 2010. "TSV is a key technology to realize Elpida's total memory solution strategy," said Elpida CTO Takao Adachi.

Elpida said the development "has moved the company to within sight of beginning mass production of TSV multi-layer products." Sample shipments of the 8-Gbit DDR3 SDRAM are scheduled to start before the end of 2009, with sampling of a 16-Gbit product scheduled to begin by mid-2010. Elpida has installed a manufacturing line for volume production of TSV-based products at the company's Hiroshima fab.

The 8-Gbit DDR3 SDRAM operates at 1.6 Gbit/s, and includes eight 1-Gbit DDR3 SDRAM chips and an interface chip. This 8-Gigabit DRAM uses one-fourth of the standby power compared with current packaging solutions, the company said.

Elpida said potential TSV applications include ultra high-density DRAM modules for use in supercomputers and servers, stacked DRAM/logic chips for mobile systems, and high-end graphics chips for consumer electronics and game consoles.

By: DocMemory
Copyright © 2023 CST, Inc. All Rights Reserved