Elpida Memory has developed a 40nm 2-gigabit (2Gb) DDR3 SDRAM, with sample shipments slated for November and mass production expected to begin before the end of 2009.

The Elpida 2Gb DDR3 SDRAM uses a smaller chip size to achieve a 44% higher chip yield per wafer compared with the chipmaker's 50nm DDR3 SDRAM and a 100% yield for DDR3 products that operate at 1.6Gbps, according to the company.

Compared with 50nm products, Elpida said its 40nm 2Gb DDR3 SDRAM uses about two-thirds less current and supports 1.2V/1.35V operation as well as DDR3 standard 1.5V, thus reducing power consumption by as much as 45%.

Elpida is also developing 65nm XS process technology that can compete with the 50nm process of other companies, said the company. Another development effort recently underway aims to produce smaller die size products based on the 65nm process.

Elpida said it will have greater flexibility to deal with changing market conditions and in making decisions about the timing of investment in 40nm process equipment and the content of technology licensed to its Taiwan partners.

Elpida said its changeover to a product-specific manufacturing system (separately managed manufacturing lines for mobile and PC-related products) at the Hiroshima Plant has already boosted yields.

By: DocMemory
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