Micron Technology and Nanya Technology have unveiled their co-developed 2Gb DDR3 chip using copper-based 42nm DRAM process technology, and said they are also working on a 30nm-class process at Micron's R&D lab in Boise.

The DRAM alliance expects to start sampling 42nm 2Gb DDR3 memory in the second calendar quarter of 2010, with production ramp planned for the second half of the year, according to the companies.

Micron and Nanya claimed the new 42nm process makes 1.35-volts (1.35V) the standard compared to 1.5V with previous generations, provinding power savings of up to 30% in high-performance computing applications including servers, notebooks and desktop PCs.

Micron and Nanya's jointly-developed 2Gb 42nm DDR3 device is capable of reaching up to 1866 megabits per second. The small die size coupled with the 2Gb density of the 42nm DDR3 device enables modules up to 16GBs.

By: DocMemory
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