GlobalFoundries Inc is starting work at its Dresden fab to develop 22-nm CMOS process and will run the process in volume.

It is not clear whether the 22-nm will include a departure from the gate-first high-K metal gate (HKMG) CMOS processes currently being brought up at 32- and 28-nanometers.

Fab 1 was expected to be workhorse fab at the 45/40-nm and 32/28-nm nodes while GlobalFoundries' wafer fab under construction in New York state, Fab 8, would run the 22-nm production and more advanced nodes. .

Fab-1, previously Fabs 30 and 36 belonging to Advanced Micro Devices Inc., became the first manufacturing site of GlobalFoundries at its formation as a joint venture between AMD and the Abu Dhabi state investment vehicle Advanced Technology Investment Co. (ATIC).

The Dresden fab is currently offering a 45-nm silicon-on-insulator process for high performance circuits but the company is moving quickly to bring up a 32-nm SOI with HKMG and a 28-nm bulk CMOS process with HKMG. Both are in the gate-first style.

By: DocMemory
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