Intel and Micron Technology plan to break ground for a new NAND flash fabrication facility in Singapore by the end of 2010.

Intel and Micron in late 2006 announced plans to construct a new 12-inch fab for NAND flash memory in Singapore, with volume production slated for the second half of 2008. However, the project has been postponed due to economic conditions.

The Intel-Micron NAND flash alliance is likely to revive the expansion plan, amid growing optimism about the outlook for the chip used in smartphones and emerging applications such as SSD, the sources claimed.

The speculation comes after Toshiba's recent announcement that it has kicked off construction of a new 12-inch NAND flash fab (Fab 5) with completion scheduled for spring 2011. The Japan-based chip vendor also announced that it has signed primary agreements with SanDisk for a new joint venture, responsible for operation of the new facility.

Samsung Electronics has already revealed a significant investment in its memory-chip business this year. The company in May disclosed plans to add the new Line-16 for DRAM, NAND and next-generation memory products in Hwaseong (Gyeonggi Province, South Korea) with the new facility expected to come online in 2011.

By: DocMemory
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