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Toshiba ramps up 24nm Nand Flash Chip


Tuesday, August 31, 2010

Toshiba announced that it has started mass production of NAND flash memory fabricated with 24nm process technology.

The latest technology advance has already been applied to 2-bit-per-cell (MLC) 64Gb chips.

Toshiba will also add 32Gb and 3-bit-per-cell (TLC) products fabricated with the 24nm process technology to its product lineup, according to the chip vendor. It did not provide a time-frame.

The 24nm process products are also equipped with Toggle DDR to enhance data transfer speeds, Toshiba said.

Toshiba claimed to aim at extending its leadership in the NAND flash memory market, by accelerating production process migration.

In addition, construction of a new NAND flash fab (Fab 5) at Toshiba's production facility in Mie Prefecture, Japan recently kicked off, with completion scheduled for spring 2011.

Fellow NAND flash producer Samsung Electronics recently launched 20nm-class 32Gb MLC NAND chips. The Korea-based vendor has also disclosed plans to add new capacity for NAND products, which is expected to come online in 2011.

By: DocMemory
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