Hynix Semiconductor has entered into a joint development agreement with Hewlett-Packard (HP) to develop memristor technology in resistive random access memory (ReRAM). .

Hynix and HP will jointly develop new materials and process integration technology to transfer memristor technology from research to commercial development in the form of ReRAM, according to the announcement.

ReRAM is non-volatile memory with low power consumption that holds the potential to replace flash memory currently used in mobile phones and digital music players. It also has the potential to serve as a universal storage medium that can behave as Flash, DRAM or even a hard drive, according to the cpmpanies.

The memristor, short for "memory resistor," requires less energy to operate, can retain information even when power is off, and is faster than present solid-state storage technologies. It was postulated to be the fourth basic circuit element by Professor Leon Chua of UC Berkeley in 1971, and first intentionally reduced to practice by researchers in HP Labs in 2006. The technology can also perform logic, enabling computation to one day be performed in chips where data is stored, rather than on a specialized CPU.

By: DocMemory
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