Samsung Electronics has announced what it claims is the industry's first production of a 3-bit-cell (TLC), 64Gb NAND flash using 20nm-class process technology. The new chip can be used in high-density flash solutions such as USB flash drives and SD memory cards.

Following the production of 20nm-class 32Gb MLC NAND in April, Samsung said it has expanded its product offerings at the leading-edge process node with the introduction of the 64Gb 3-bit NAND.

Samsung noted that its 20nm-class, 64Gb 3-bit NAND has a 60% higher productivity level than 30nm-class, 32Gb 3-bit NAND. The device also offers improved performance by applying Toggle DDR 1.0 specifications, compared to those of single data rate (SDR) based 30nm-class NAND chips.

The availability of storage density as high as 8GB (64Gb) in a single chip will trigger widespread acceptance of Toggle DDR-based high-performance flash in USB drives and SD cards, as well as smartphones and SSDs, while replacing previous 4GB (32Gb) devices in the market, Samsung expects.

By: DocMemory
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