Samsung Electronics has developed a monolithic 4Gb, low-power DDR2 (LPDDR2) memory device built using 30nm-class process technology for smartphone application.

Samsung said that starting in November, it will begin sampling 8Gb LPDDR2 DRAM by stacking two 4Gb chips in a single package.

The new 4Gb LPDDR2 DRAM transfers up to 1,066Mbps, which approaches the performance of memory solutions for PC applications. It also more than doubles the performance of the industry's previous mobile DRAM, which operates between 333Mbps and 400Mbps, according to Samsung.

With the new 4Gb LPDDR2, the 8Gb solution offers a 20% package height reduction (0.8mm vs. 1.0mm) and will save 25% of the power consumed by the previous 8Gb package that used four 2Gb chips, the company indicated. This enables thinner, lighter mobile devices with longer battery life.

Samsung expects to meet the increasing needs for high-density LPDDR2 solutions, as the smartphone and tablet PC markets expand throughout 2011. The company also revealed plans to provide 16Gb (2GB) LPDDR2 DRAM by stacking four of the 4Gb chips, as capacity needs continue to grow.

"The mobile device market is gaining momentum with the advent of tablet PCs, which is adding significantly to the already surging smartphone segment," said Jun-Young Jeon, vice president, memory product planning team, Samsung.

By: DocMemory
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