Elpida Memory and Rexchip Electronics have jointly announced the successful joint pilot production of 1Gb DDR3 SDRAM featuring 4F2 memory cell architecture.

Rexchip's R&D center, which commenced operations in 2010, has been working with Elpida to develop 4F2 cells in DRAM. The pair has succeeded to make a prototype 1Gb DDR3 SDRAM with 4F2 cells using a 65nm design rule.

Compared with 6F2 memory cells, the 4F2 cell size is 30% smaller while chip size and chip output are roughly the same as Elpida's DRAM in the 50nm process node class. With its excellent data retention characteristics and high-performance vertical transistor structure, 4F2 cells are likely to become the fundamental technology for next-generation DRAM and meet requirements for low-power mobile DRAM.

By: DocMemory
Copyright © 2023 CST, Inc. All Rights Reserved