Thursday, March 24, 2011
Samsung has started the industry¡¯s first production of four gigabit (Gbit), low power double-data-rate 2 (LPDDR2) DRAM using 30-nm-class technology earlier this month. The chip is devised for smartphones, tablets and other mobile devices.
Samsung developed the 4-Gbit LPDDR2 DRAM in December of last year and began mass producing it earlier this month. Compared to the previous 40-nm-class 2-Gbit LPDDR2 DRAM, the 30-nm-class 4-Gbit LPDDR2 DRAM increases productivity by 60 percent.
It delivers a data transmission speed of 1,066-Mbps, which is more than double that of today¡¯s MDDR, which operates between 333- to 400-Mbps.
When creating a 1-GB (8Gb) LPDDR2 package with the previously highest density chips of 2-Gbit, four chips had to be stacked together. With the new 4-Gbit LPDDR2, stacking only two chips will achieve the same density, while providing a 20 percent package height reduction from 1.0- to 0.8mm. It also consumes 25 percent less power.
Samsung plans to produce the 4-Gbit LPDDR2 chip based 1-GB (8-Gb) packages beginning this month, and plans to produce 2-GB (16-Gb) packages consisting of four 4Gb devices next month.
By: DocMemory
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