Toshiba has unveiled NAND flash memories made using a 24-nm process technology.

The SmartNAND series integrates NAND flash memory with a control IC that supports error checking and correction (ECC) and is available in densities ranging from 4- to 64-Gbyte, according to Toshiba.

The SmartNAND 24-nm products are replacements for current 32-nm generation devices. The integrated error correction (ECC) and leading edge 24nm process generation allows for enhanced speed performance of 1.9 times faster read speed and 1.5 times faster write speed than the current lineup. Toshiba's SmartNAND offers a range of read and write speeds to vary optimized speed performance; the read speed is available in four options and the write speed in two. Power save mode is also available for lower power requests.

The components have a standard NAND flash memory interface, 8-kbyte page size and come in 48-pin TSOP(12mm by 20mm by 1.2mm) and 52-land LGA  (14mm by 18mm by 1.0mm) packages.

Samples of the new SmartNAND family are available in mid-April and mass production will begin 2Q11 with some memories becoming available in 3Q11 and 4Q11.

By: DocMemory
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