Elpida Memory has announced development of a 2Gb DDR3 DRAM using 25nm process technology.

Elpida's new 25nm 2Gb DDR3 SDRAM can support ultra-fast performance above DDR3-1866 (1866Mbps), and is compliant with low-voltage 1.35V high-speed DDR3L-1600 (1600Mbps), the company said. Sample shipments and volume production are expected to begin in July 2011.

The 25nm DRAM process technology requires 30% less cell area per bit compared with Elpida's 30nm process, the company said. Chip output for a 2Gb DDR3 wafer using the new process is about 30% higher versus 30nm.

The new SDRAM is an eco-friendly as it contributes to lower energy consumption by PCs and digital consumer electronics, Elpida pointed out. It outperforms Elpida's 30nm process products by saving on electric current (15% less operating current and 20% less current when on standby).

Elpida said it also plans to begin volume producing 4Gb DDR3 SDRAM products using the 25nm process by the end of 2011. Compared with the 30nm process, a 44% increase in chip output per wafer is expected for this 4Gb DDR3 product.

In addition, the new 25nm process will be used to support further development of mobile RAM, Elpida said

By: DocMemory
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