Thursday, July 14, 2011
Hynix Semiconductor and Toshiba have co-develop a magnetoresistance RAMs together and said this is an important next-generation non-volatile memory.
Both companies plan to form a joint venture to produce STT-MRAMs. As part of the strategic collaboration Hynix and Toshiba have extended their patent cross licensing.
MRAM is non-volatile memory, it is also power efficient and operates at ultra-high speed, the companies said in a joint statement. The initial applications for the technology are expected to be in mobile applications where power efficiency is highly valued.
The companies did not disclose what memory capacities they intend to manufacture first or a timetable for when they expect to be in commercial manufacturing.
Many established semiconductor companies have made MRAMs and it has also been the stimulus for spin-offs and startups including Everspin Technologies Inc. Grandis Inc. and Crocus Technology Inc. However, the commitment by two of the world's largest manufacturers of NAND flash and DRAM memory to MRAM marks a significant change. The highest capacity MRAMs on the the market are at about 16-Mbit which is considerably behind the 64-Gbit achieved with NAND flash memory using 20-nm class manufacturing processes. However, many developers are seeing MRAM as replacement for DRAM with the benefits of superior scaling and non-volatility.
By: DocMemory
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