Samsung Electronics has announced that its 30nm-class DDR3 memory is being adopted by Microsoft in its virtualized data center.

Available through the Microsoft Technology Center, the data center platform can be used immediately, Samsung said. Detailed findings on the evaluation testing are available in a white paper posted on Microsoft's website.

Samsung revealed that its 30nm-class Green DDR3 was tested in 8GB RDIMMs installed on server systems running virtualized environments with the Windows Server 2008 R2 Enterprise operating system. They delivered power conservation levels of up to 15% for a 30-watt per system decrease, compared to systems using 50nm-class DDR3.

The new evaluation tests combining Samsung's Green DDR3 and Microsoft's enterprise system evaluation platform are focused on achieving an optimal match between performance and power efficiency, the two top priorities of data centers, Samsung indicated.

Samsung's 30nm-class 2Gb DDR3 chips feature sufficient performance based on innovative circuit design and advanced processes. For server applications, memory modules can reach up to 1.866Gbps at 1.35 volts, while PC modules can run at up to 2.133Gbps (1.5 volts), which is 3.5 times faster than 60nm-class DDR2 and 1.6 times faster than 50nm-class DDR3, Samsung claimed.

Microsoft and Samsung also announced plans to expand their collaborative evaluation efforts that optimize 20nm- and 30nm-class DDR3 memory and enterprise SSDs through system-level tests in virtual environments. The collaboration will include next-generation DRAM and data storage devices that contribute significantly to an IT department's total cost of ownership.

By: DocMemory
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