Friday, October 14, 2011
Resistive RAM, a non-volatile memory technology usually based on metallic oxide, is unlikely to enter the market until after the 11-nm node, according to Laith Altimime, director of the memory research program at the IMEC research institute. It may do so then as a replacement for stacked floating-gate NAND flash memory and be pushing toward the monolithic integration of 2- to 4-Tbits he said at press event hosted by IMEC.
Altimime presented a flash memory roadmap that shows conventional floating-gate flash changing to so-called SONOS flash with a vertical 8-layer stacked structure at 17-nm. The stacking could increase to 16 layers at 14-nm to 11-nm. Only after that would Resistive RAM (RRAM) enter the market when it would necessarily have to have a similarly stacked structure to allow it to compete. SONOS is a silicon-oxide-nitride-oxide-silicon form of non-volatile flash memory.
IMEC is working collaboratively with major memory manufacturers including Elpida, Hynix, Micron and Samsung on both flash and follow-on memory roadmaps. Toshiba is a notable absentee from the program. The proposed memory transistor stacking is monolithic and would be in addition to die stacking that might also be done on packaged component basis.
RRAM needs to aim at intersecting with the stacked flash roadmap after the 11-nm node, according to IMEC
By: DocMemory
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