Winbond Electronics, a Taiwan-based maker of memory products, has been shifting production of specialty DRAM to 46nm process and NOR flash to 58nm..

In first-quarter 2012, 65nm accounted for 56% of its total output, 42% for 90nm, 1% each for 58nm and 46nm, Winbond indicated.

Winbond will adjust allocation of foundry capacity at its 12-inch fab with capital expenditure of NT$3.6 billion (US$122 million) in 2012, with monthly capacity for NOR flash to be increased from 15,000 wafers currently to 17,000 wafers, of which 6,000 and 3,000 wafers will be based on 58nm and 46nm technology respectively. Capacity for specialty DRAM will be lowered from 20,000 wafers to 18,000 wafers, of which 9,000 wafers will be based on 46nm process.

Winbond posted revenues of NT$5.813 billion, gross margin of 5.09%, net operating loss of NT$707 million, net loss of NT$646 million and net loss per share of NT$0.18 for the first quarter.

Of the first-quarter 2012 revenues, 45% came from specialty DRAM, 39% from NOR flash, 15% from mobile RAM and 1% from graphics DRAM, Winbond said. In terms of applications, 37% of its products shipped in the first quarter were used in PCs, 32% in communication devices, 28% in consumer electronics and 3% in others, Winbond indicated.

By: DocMemory
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