Toshiba has unveiled plans to expand the capacity of its NAND flash chip fabrication facility in Yokkaichi, Japan with a nearly JPY30 billion (US$300 million) investment.

Toshiba will begin construction on Phase 2 of Fab 5 in August 2013, with completion slated for the summer of 2014, according to the company.

"After giving careful consideration to the balance of product supply and demand, and noting a recovery driven by growing demand for smartphones, tablets, SSDs for enterprise servers and other new applications, Toshiba now anticipates further medium- to long-term market expansion and recognizes that the time is right to expand Fab 5," said the company in a statement.

The expanded facility will also produce 3D NAND memory, in addition to additional capacity for chips on more advanced nodes, Toshiba indicated.

Toshiba's Yokkaichi, Japan operation already has three NAND flash memory fabrication facilities, including Phase 1 of Fab 5 which started operating in July 2011.

By: DocMemory
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