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Toshiba breaks ground for Phase 2 of Fab 5


Monday, August 26, 2013

Toshiba on August 23 held a groundbreaking ceremony in readiness for the start of construction of Phase 2 of Fab 5, a NAND flash fab located at the company's Yokkaichi operations memory production facility in Mie Prefecture, Japan.

The expanded facility will also produce NAND flash memory fabricated with next generation process technology and for 3D memory, Toshiba indicated. Construction will be completed in summer 2014.

Toshiba's Yokkaichi, Japan operation already has three NAND flash memory fabrication facilities, including Phase 1 of Fab 5 which started operating in July 2011.

By: DocMemory
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