The 8Gb LPDDR4 is made using 20nm-class process technology, and offers 1GB on a single die, which is the largest density available for DRAM components today. With four of the 8Gb chips, a single 4GB LPDDR4 package can provide the highest level of performance available today. Based on this new interface, the LPDDR4 chip will enable a data transfer rate per pin of 3200 Mb/s, which is twice that of the 20nm-class LPDDR3 DRAM now in mass production. Overall, the new LPDDR4 interface will provide 50% higher performance than the fastest LPDDR3 or DDR3 memory. Also, it consumes approximately 40% less energy at 1.1 volts.

In addition, Samsung’s new 8Gb LPDDR4 uses a low voltage swing terminated logic (LVSTL) I/O interface, which was originally proposed by Samsung to JEDEC and has become a standard specification for LPDDR4 DRAM. “This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market. We will continue introducing the most advanced mobile DRAM one step ahead of the rest of the industry so that global OEMs can launch innovative mobile devices with exceptional user convenience in the timeliest manner,” said Young-Hyun Jun, executive vP, memory sales & marketing, Samsung Electronics.

With the new chip, Samsung will focus on the premium mobile market including large screen UHD smartphones, tablets and ultra-slim notebooks that offer four times the resolution of full-HD imaging, and also on high-performance network systems.

Samsung’s new high-speed 8Gb LPDDR4 mobile DRAM will provide the highest level of density, performance and energy efficiency for mobile memory applications, enabling end users to have faster, more responsive applications, more advanced features, and higher resolution displays while maximizing battery life.

By: DocMemory
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