Monday, February 17, 2014
Samsung Electronics is ramping up production of DRAM memory using 25nm process technology, posing a threat to Micron Technology and SK Hynix.
Micron is unlikely to complete its technology transition to a 20nm process until the end of 2014, said the observers. The firm builds the majority of its DRAM chips using 30nm process technology.
Nonetheless, Micron's production plant in Hiroshima, Japan has upgraded its process technology to 25nm, the observers noted. The Hiroshima fab, formerly a 12-inch fab owned by Japan's Elpida Memory, is dedicated to producing mobile DRAM chips.
Micron's Hiroshima fab and Taiwan's Inotera Memories, a production subsidiary of Micron, are both scheduled to migrate to 20nm process technology by the end of 2014, the observers revealed.
The fire at SK Hynix' DRAM fab in China in September 2013 has interrupted the company's technology transition plans, the observers indicated. SK Hynix' major production node for DRAM memory remains 29nm, the observers said.
By: DocMemory
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