General Electric has crafted a 3 GHz micro-electromechanical system (MEMS) switch that can handle a whopping 5 kilowatts of power -- enabling a new generation of applications. The switch measures just 100 microns square, using a material set that is compatible with GE's existing semiconductor manufacturing lines.

GE plans to use its MEMS switch to power a variety of in-house technologies, but is also offering it to the communications industry where its exceptional linearity enables what GE claims is "true 4G" applications that run at up to 3 Gbit/s rather that the 300 Mbit/s typical of 4G implementations today. To boot, the new GE MEMS switch has an ultra-low insertion loss of just 10 nanowatts, thereby extending the battery life of otherwise power-hungry 4G smartphones.

GE claims its MEMS switch technology can handle high-power devices using kilowatts in industrial equipment and protection devices all the way down to tens of watts for ordinary light bulbs and sub-watt loads for hand-held devices. GE is keeping all the details about the materials set used close to its vest, but claims its low-contact resistance has tested out with billion-cycle lifetimes even under extreme temperatures.

By: Docmemory
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