Toshiba and SK Hynix have entered a definitive agreement on the joint development of nanoimprint lithography (NIL). Engineers from the two companies will begin development of basic technologies for the process at Toshiba's Yokohama Complex in Yokohama, Japan in April this year, targeting practical use in 2017.

Toshiba has worked with several equipment and materials companies on NIL, integrating their technologies with Toshiba's semiconductor manufacturing process. The joint development program with SK Hynix accelerate progress towards practical use and will mitigate burden of Toshiba's investment into NIL development.

NIL is the one of candidate technologies for advancing the migration to future generations of memory devices. Photolithography, the mainstream process technology, uses a laser and photosensitive mask to etch circuits on a light-sensitive coating on semiconductor wafers. NIL transfers the circuit design directly, by impressing a patterned template onto the wafer. This has the potential to achieve finer designs.

Toshiba will continue drive development of next generation lithography technology, such as NIL and extreme ultraviolet lithography, as a means to strengthen its memory business and the migration to future product generations.

SK Hynix and Toshiba expect that this collaboration will enable the two parties to successfully develop the NIL by minimising risk and move up commercialisation of this technology. Also once it is successfully commercialised, it is expected to make a significant contribution to the acceleration of cost competitiveness.

By: DocMemory
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