Responding to China's ambitions to step into the memory industry, Inotera Memories and Nanya Technology both believe that it is unlikely China can develop home-grown DRAM technology within at least five years.

China might be able to gain access to proprietary technologies through technology licensing, but building a certain scale of production capacity would still require a period of time, the Taiwan-based DRAM makers commented. That means China's impact on the memory industry would not be felt until after 2-3 years, the makers said.

The key DRAM technologies are being held by Samsung Electronics, Micron Technology and SK Hynix. Under the current circumstances, none of the vendors should consider licensing their technologies to China-based companies as they are aware of oversupply concerns, the makers indicated.

The global DRAM industry just ended its two-year downturn, and has begun to benefit from a healthier supply-demand dynamic, the makers said.

In addition, Nanya said that the company has no intention to set up a production base in China. Nanya added the company will continue to improve its product mix and improve its cost structure.

Nanya is also in the progress of transitioning to 20nm process technology, and is striving to enhance its low-power DRAM technology portfoliio for a wide range of market applications, the company said. Nanya is looking to enter volume production of 20nm chips in the second half of 2017, and build additional LPDDR4 and DDR4 product lines.

By: DocMemory
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